1,000 layers and 1 TB SSDs are on the way
Samsung is currently 9. It carried V-NAND started its production and in this memory to 290 layers had reached. Interestingly, while the company produced 236-layer solutions in the previous generation, 430 layers next year (10th Generation V-NAND) will produce a NAND memory based on stacking. However, increasing the number of layers alone will not be enough for Samsung to reach its 1 petabyte targets. Although the company focuses on TCL NAND production for now, it wants to bring four-level cell, that is, Quad-level cell (QLC) chips to the mainstream in the future.
It is necessary to take into account that voltage levels will also increase in order to store more bits per cell. Therefore, it is critical to identify the right materials that can store the high voltage state, produce them in volume, and control the temperature. However Samsungalthough not officially confirmed, is actively working to solve these problems. is closely involved in research.
from Korea Advanced Institute of Science and Technology at the VLSI Technology Symposium (KAIST) researchers, under certain conditions ferroelectric A class of materials characterized by Hafnia working on it. It is stated that low voltage levels can be maintained with this ferroelectric material. It is thought that ferroelectric materials can play a role in the development of more efficient capacitors and memories. In the relevant research, it is already mentioned that hafnia can be used in 3D V-NAND memories.
Source
https://www.tweaktown.com/news/98238/samsung-is-preparing-to-create-the-worlds-first-petabyte-ssd/index.html
https://www.tomshardware.com/news/samsung-talks-1pb-ssds
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