3D X-AI reveals huge potential
The introduced 3D X-AI aims to reduce the large amount of data transferred between HBM and GPUs during AI workloads. NEO’s solution has the potential to create a leap in performance, power consumption and cost of AI chips for AI applications such as generative AI. Because, according to the company, thanks to the new 3D X-AI technology, new artificial intelligence chips 100x performance increase, 99 percent power savings and 8x memory density promises.
According to NEO Semiconductor, current AI chips waste significant amounts of performance and power due to architectural and technological inefficiencies. The current AI chip architecture stores data in HBM and uses a GPU to perform all calculations. This separated data storage and data processing architecture creates an inevitable bottleneck in the data path.
On the 3D X-AI side, every AI processing on HBM chip can realize it. In this way, the data transferred between HBM and GPU can be greatly reduced, improving performance and significantly reducing power consumption. Single 3D X-AI pattern 128 Gb capacity 300 layers of 3D DRAM cell and A neural circuit with 8,000 neurons Contains layer.
According to NEO’s prediction, this 10 TB/s per dieIt can support up to AI processing capacity. stacked with HBM package twelve 3D X-AI patterns when used 120 TB/s throughput by obtaining 100x performance increase can be achieved. In addition, by reducing power consumption and heat generation by the bus, 99 percent energy savings and 8 times density are achieved with the mentioned 300 layers.
Source
https://www.tweaktown.com/news/99836/neo-semiconductors-new-3d-ai-chip-tech-replace-hbm-used-in-gpus-with-100x-more-perf/index.html
https://neosemic.com/wp-content/uploads/2024/08/3D-X-AI-Brochure.pdf
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