Micron announced 276-layer TLC NAND memory, the industry’s highest-performance NAND flash memory. This new memory is faster than other competitors in the industry by offering a full 3.6 GB/s transfer speed. 50 percent faster. Details are in our news…
Micron introduces 276-layer TLC NAND flash memory at 3.6 GB/s
Micron’s G9 NAND memory outperforms other solutions on the market in terms of read and write bandwidth, respectively. 99 percent and 88 percent offers higher performance. This performance increase provides a huge advantage for SSDs and embedded storage solutions. This means file transfers, app installations and other data-intensive workloads will now be much faster.
The 276-layer 3D TLC NAND features 11.5mm x 13.5mm compact packaging, like previous generation Micron NAND flash memories. This reduces PCB area by 28%, providing more design options. It can be used on smaller devices and also offers more storage capacity.
Micron’s new G9 NAND technology is superior to its current competitors in terms of density. 73 percent more offers capacity. This means more compact and efficient storage solutions. Scott DeBoer, Micron’s Vice President of Technology and Product, stated that this new technology demonstrates Micron’s strength in design and manufacturing innovation. Micron continues to deliver leading NAND technologies for the third generation.
Micron plans to put these next-generation NAND flash memories into mass production in the third quarter of this year. This new technology seems to be of great interest, especially for users looking for high-performance and efficient storage solutions. It will be a significant move for SSDs, embedded systems and more.
Micron’s new 276-layer NAND memory looks set to exceed expectations in storage technology. So what do you think? You can share your opinions and expectations with us in the comments section below.
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